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Domain boundaries (DBs) generated during the growth of cubic silicon carbide (3C-SiC) on (001) Si and their interaction with stacking faults (SFs) were studied in this work. Direct scanning transmission electron microscopy (STEM) images show DBs are inverted domain boundaries (IDBs). The atomic arrangement of this IDB is different from the expected boundaries described in the literature; nevertheless, it has a highly coherent nature. The IDBs propagate in a complex way through the crystal forming “complex-IDBs” that interact strongly with SFs. In particular, we observed that IDBs can terminate and generate SFs. The presence of disconnections in the IDB could be responsible for this behavior. Some models are discussed in order to explain the interconnections between IDBs and SFs. Moreover, an ab initio Monte Carlo simulation was performed in order to shed light on the kinetics of the SFs–IDB interaction …
American Chemical Society
Publication date: 
18 Mar 2020

Massimo Zimbone, Eric Gasparo Barbagiovanni, Corrado Bongiorno, Cristiano Calabretta, Lucia Calcagno, Giuseppe Fisicaro, Antonino La Magna, Francesco La Via

Biblio References: 
Volume: 20 Issue: 5 Pages: 3104-3111
Crystal Growth & Design