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The crystallization behavior of amorphous nano regions (20–100 nm in diameter) embedded in a textured epitaxial Ge 2 Sb 2 Te 5 (GST) 25 nm thick film grown on a Si (1 1 1) substrate has been investigated in situ by transmission electron microscopy (TEM) analysis. The amorphous regions were obtained by irradiation with 30 keV Ge+ at a fluence of 1.5× 10 14 ions cm− 2 of masked samples. The adopted configuration simulates the GST structure of a device in the RESET state, it is then of relevance for understanding their data retention characteristics. The in situ TEM analysis indicates that the amorphous to crystal transition for 20 nm dots is characterized by a growth velocity of 3.6 pm s− 1 at 75 C, probably related to the external partially damaged area. At 90 C annealing crystallization is completed for 20 nm dot. In the case of 50 and 100 nm diameter amorphous dots a growth velocity of about 2.6 pm s− 1 was …
IOP Publishing
Publication date: 
6 Mar 2020

G D’Arrigo, AM Mio, JE Boschker, A Meli, S Cecchi, E Zallo, A Sciuto, M Buscema, E Bruno, R Calarco, E Rimini

Biblio References: 
Volume: 53 Issue: 19 Pages: 194001
Journal of Physics D: Applied Physics