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The effect of varying growth rate on the formation of defects in homo-epitaxially grown cubic silicon carbide (3C-SiC) is studied. Three growth rates are considered (30, 60 and 90 μm/hr) demonstrating that as the growth rate increases the density of point defects, as demonstrated by photo-luminescence, and stacking faults (SFs), as measured by a KOH etching procedure, increase. Scanning transmission electron microscopy images demonstrate generation, annihilation and closure of SFs as a function film thickness. High resolution X-ray diffraction is used to uncover the higher quality of homo-epitaxial with respect hetero-epitaxial films through the examination of the sample mosaicity and SF density.
Trans Tech Publications Ltd
Publication date: 
1 Jan 2019

Eric G Barbagiovanni, Alessandra Alberti, Corrado Bongiorno, Emanuele Smecca, Massimo Zimbone, Ruggero Anzalone, Grazia Litrico, Marco Mauceri, Antonino La Magna, Francesco La Via

Biblio References: 
Volume: 963 Pages: 346-349
Materials Science Forum