Mild heating of the Zn(C5F6HO2)2·2H2O·CH3(OCH2CH2)2OCH3 precursor allowed MOCVD deposition of ZnO films, in a low-pressure horizontal hot-wall reactor, on ITO substrates. The ZnO films were subsequently implanted with Sb ions. XRD measurements provided evidence that they consist of hexagonal, (002) and (101) oriented, crystals. UV–vis spectra showed that the transmittance of these films in the visible region is about 90%. The Sb implanted ZnO film showed a current-voltage characteristic that resembles that of a rectifying diode. This study represents the first example of Sb-implantation in ZnO films obtained by MOCVD.
1 Oct 2017
Volume: 69 Pages: 32-35
Materials Science in Semiconductor Processing