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Type: 
Journal
Description: 
Experimental evidences and microscopic modelling of the mechanism of B diffusion in Si and Ge are given. In both the lattices B migrates by the mediation of self-interstitials (Is). In Si, B diffusion occurs mainly through the formation of a BI0 complex, after interactions of BS-with I0 or with I++ in intrinsic condition or high hole densities, respectively, followed by a proper charge exchange. A small contribution of the BI-complex is visible only under n-type doping, when BS-and I0 bind nonetheless the pairing of B with the n-dopants. Also in Ge, the B diffusion mechanism has been fixed, even if to a lower extent, revealing the need of self-interstitials to start the B motion. We evidenced the occurrence of the proton radiation enhanced diffusion (RED) and of the transient enhanced diffusion (TED) of B, modeling both the cases with the central role of Is.
Publisher: 
The Electrochemical Society
Publication date: 
1 Oct 2010
Authors: 

Salvo Mirabella, Davide De Salvador, Elena Bruno, Enrico Napolitani, Giorgia Scapellato, Massimo Mastromatteo, Giuliana Impellizzeri, Gabriele Bisognin, Simona Boninelli, Antonio Terrasi, Alberto Carnera, Francesco Priolo

Biblio References: 
Volume: 33 Issue: 11 Pages: 167-178
Origin: 
ECS Transactions