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Type: 
Journal
Description: 
We investigated the effect of F on the electrical activity of B-doped junctions in preamorphized Si. It is shown that while the carrier dose introduced by B is reduced in the presence of F, no indication of B–F complexes formation can be found and B maintains its full substitutionality. Investigations on F-enriched crystalline Si demonstrated and quantified the n-type doping of F. These results clarify that the loss of holes in junctions coimplanted with B and F is not due to a chemical interaction between B and F, but simply to a dopant compensation effect.
Publisher: 
AIP
Publication date: 
24 Sep 2007
Authors: 
Biblio References: 
Volume: 91 Issue: 13 Pages: 132101
Origin: 
Applied Physics Letters