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Type: 
Journal
Description: 
We report on the F incorporation into Si during solid-phase epitaxy (SPE) at 580°C and with the presence of B and∕or As, clarifying the F incorporation mechanism into Si. A strong segregation of F at the moving amorphous–crystalline interface has been characterized, leading to a SPE rate retardation and to a significant loss of F atoms through the surface. In B- or As-doped samples, an enhanced, local F incorporation is observed, whereas in the case of B and As co-implantation (leading to compensating dopant effect), a much lower F incorporation is achieved at the dopant peak. The F enhanced incorporation with the presence of B or As is shown to be a kinetic effect related to the SPE rate modification by doping, whereas the hypothesis of a F–B or F–As chemical bonding is refused. These results shed new light on the application of F in the fabrication of ultrashallow junctions in future generation devices.
Publisher: 
AIP
Publication date: 
21 Mar 2005
Authors: 
Biblio References: 
Volume: 86 Issue: 12 Pages: 121905
Origin: 
Applied Physics Letters