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The effect of O implantation in crystalline Ge on the density of native point defects has been investigated through transmission electron microscopy and B diffusion experiments. Annealing at 650 C following O implants produces a band of defects (∼ 5–10 nm), compatible with GeO 2 nanoclusters (NCs). A clear shape transformation from elongated to spherical forms occurs within 2 h, concomitant with a transient enhanced diffusion of B. A large injection of self-interstitials from GeO 2 NCs, giving a vacancy undersaturation, and a long-range migration of self-interstitials are evidenced and discussed.
American Physical Society
Publication date: 
5 Jul 2011

GG Scapellato, S Boninelli, E Napolitani, E Bruno, AJ Smith, S Mirabella, M Mastromatteo, D De Salvador, R Gwilliam, C Spinella, A Carnera, F Priolo

Biblio References: 
Volume: 84 Issue: 2 Pages: 024104
Physical Review B