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Type: 
Journal
Description: 
The enhanced diffusion of donor atoms, via a vacancy (V)-mechanism, severely affects the realization of ultrahigh doped regions in miniaturized germanium (Ge) based devices. In this work, we report a study about the effect of fluorine (F) on the diffusion of arsenic (As) in Ge and give insights on the physical mechanisms involved. With these aims we employed experiments in Ge co-implanted with F and As and density functional theory calculations. We demonstrate that the implantation of F enriches the Ge matrix in V, causing an enhanced diffusion of As within the layer amorphized by F and As implantation and subsequently regrown by solid phase epitaxy. Next to the end-of-range damaged region F forms complexes with Ge interstitials, that act as sinks for V and induce an abrupt suppression of As diffusion. The interaction of Ge interstitials with fluorine interstitials is confirmed by theoretical calculations. Finally …
Publisher: 
AIP
Publication date: 
1 Jun 2011
Authors: 

G Impellizzeri, S Boninelli, F Priolo, E Napolitani, C Spinella, A Chroneos, H Bracht

Biblio References: 
Volume: 109 Issue: 11 Pages: 113527
Origin: 
Journal of Applied Physics