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Scanning capacitance microscopy (SCM) was carried out in the angle beveling configuration on B doped, very narrow quantum wells (QWs) of Si0.75Ge0.25 layers strained between Si films. The majority carrier concentration profiles were calculated from the SCM raw data measured on QWs with a minimum width of 5nm, doped with different B concentrations ranging from 2×1016to6×1018cm−3. The equilibrium carrier distribution in the heterostructures has been calculated by different simulation approaches, which will be discussed. Moreover, the effect of the biased tip-sample interaction was studied by accurate simulations of the dC∕dV vs V characteristics for different positions of the tip moving on the beveled sample surface. The agreement between the experimental and simulated SCM profiles is very good. Thus, a spatial SCM resolution of at least 5nm was demonstrated on angle beveled samples, not only in …
Publication date: 
1 Jan 2005
Biblio References: 
Volume: 97 Issue: 1 Pages: 014302
Journal of applied physics