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Type: 
Journal
Description: 
The electrical transport properties of n-type crystalline-Ge amorphized by ion implantation have been determined by resistivity and Hall effect measurements in the 64–255 K temperature range. Amorphous layer was realized by implanting Ge+ ions in Ge single crystal maintained at ∼77 K at fluences above the amorphization threshold. The samples exhibited a surprising lower sheet resistance with respect of un-implanted crystalline Ge, resulting from positive charge carriers and very high mobility. Experimental observations are consistent with a p-type conduction induced by surface states and a high mobility channel at the amorphous-crystal interface.
Publisher: 
Pergamon
Publication date: 
1 Dec 2012
Authors: 
Biblio References: 
Volume: 15 Issue: 6 Pages: 703-706
Origin: 
Materials Science in Semiconductor Processing