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The dissolution of interstitial-type end-of-range (EOR) damage in preamorphized Ge is shown to induce a transient enhanced diffusion of an epitaxially grown boron delta at temperatures above 350 °C that saturates above 420 °C. The B diffusion events are quantitatively correlated with the measured positive strain associated with the EOR damage as a function of the annealing temperature with an energy barrier for the EOR damage dissolution of 2.1±0.3 eV. These results unambiguously demonstrate that B diffuses in Ge through a mechanism assisted by self-interstitials, and impose considering the interstitial implantation damage for the modeling of impurity diffusion in Ge.
American Institute of Physics
Publication date: 
17 May 2010

E Napolitani, G Bisognin, E Bruno, M Mastromatteo, GG Scapellato, S Boninelli, D De Salvador, S Mirabella, C Spinella, A Carnera, F Priolo

Biblio References: 
Volume: 96 Issue: 20 Pages: 201906
Applied Physics Letters