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Superlattices of Si3N4 and Si-rich silicon nitride thin layers with varying thickness were prepared by plasma enhanced chemical vapor deposition. After high temperature annealing, Si nanocrystals were formed in the former Si-rich nitride layers. The control of the Si quantum dots size via the SiNx layer thickness was confirmed by transmission electron microscopy. The size of the nanocrystals was well in agreement with the former thickness of the respective Si-rich silicon nitride layers. In addition X-ray diffraction evidenced that the Si quantum dots are crystalline whereas the Si3N4 matrix remains amorphous even after annealing at 1200 °C. Despite the proven Si nanocrystals formation with controlled sizes, the photoluminescence was 2 orders of magnitude weaker than for Si nanocrystals in SiO2 matrix. Also, a systematic peak shift was not found. The SiNx/Si3N4 superlattices showed photoluminescence peak …
American Institute of Physics
Publication date: 
14 Nov 2013

A Zelenina, Sergey A Dyakov, D Hiller, S Gutsch, V Trouillet, M Bruns, S Mirabella, P Löper, L López-Conesa, J López-Vidrier, S Estradé, F Peiró, B Garrido, J Bläsing, A Krost, DM Zhigunov, M Zacharias

Biblio References: 
Volume: 114 Issue: 18 Pages: 184311
Journal of Applied Physics