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The phenomena related to the electrical activation of low energy implanted B (3keV,2×1014B∕cm2) in laterally submicron confined Si regions were studied by high resolution quantitative scanning capacitance microscopy (SCM). The B diffusion and its precipitation into electrically inactive B–Si interstitial clusters (BICs) were studied by varying the implant window size from 3.2to0.38μm and annealing at 800°C from 12to200min in N2 ambient. In particular, the electrically active B fraction is followed by calculating the carrier concentration profile from SCM data with increasing the annealing time. Both the B reactivation and diffusion exhibit a strong dependence on the window width. The higher electrically active B fraction is always found in the narrowest window, which also first recovers the almost complete electrical activation. The B diffusivity enhancement for the 3.2μm window size is more than one order of …
American Vacuum Society
Publication date: 
27 Jan 2006
Biblio References: 
Volume: 24 Issue: 1 Pages: 468-472
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena