The defects produced in 4H-SiC epitaxial layers by irradiation with 200-keV H+ were characterized by low-temperature photoluminescence. These defects induce sharp luminescent lines, the so-called alphabet lines. Their intensity shows an evolution under UV-laser irradiation not previously observed. By monitoring the change in the resulting photoluminescence spectra versus time, we distinguish two original ‘families’ of peaks called PB1 and PB2. They display a different, and opposite, behaviour with laser irradiation but they are strongly correlated. In particular, the recovering rate of the PB1 family and the growth rate of the PB2 family are the same, indicating a structural rearrangement of defects.
1 Jan 2009
Volume: 94 Issue: 1 Pages: 29-32
Applied Physics B