-A A +A
The formation of polycrystalline Si Si layers on flexible plastic substrates, through plasma enhanced chemical vapor deposition and excimer laser annealing, is investigated. Combining low-temperature( 300 C)(300 C) annealing with laser dehydrogenation/crystallization produces good-quality polycrystalline silicon with a reduced shot density. By using optimal crystallization conditions it is possible to achieve a superlateral growth crystallization regime, with a grain size up to 1 μ
The Electrochemical Society
Publication date: 
1 Oct 2008

V Privitera, S Scalese, A La Magna, A Pecora, M Cuscunà, L Maiolo, A Minotti, D Simeone, L Mariucci, G Fortunato, L Caristia, F Mangano, S Di Marco, M Camalleri, S Ravesi, S Coffa, MG Grimaldi, R De Bastiani, P Badalà, S Bagiante

Biblio References: 
Volume: 155 Issue: 10 Pages: H764-H770
Journal of The Electrochemical Society