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We analyze the results of an extensive characterization study involving electrical and optical measurements carried out on hydrogenated amorphous silicon (α-Si:H) thin film materials fabricated under a wide range of deposition conditions. By adjusting the synthesis parameters, we evidenced how conductivity, activation energy, electrical transport and optical absorption of an α-Si:H layer can be modified and optimized. We analyzed the activation energy and the pre-exponential factor of the dark conductivity by varying the dopant-to-silane gas flow ratio. Optical measurements allowed to extract the absorption spectra and the optical bandgap. Additionally, we report on the temperature dependence of the activation energy to satisfy the Meyer–Neldel rule. Finally, the influence of the individual films parameters upon the final performances of a single junction pin α-Si:H have been studied. The measurements show how …
Publication date: 
30 Mar 2012

I Crupi, FS Ruggeri, A Grasso, F Ruffino, G Catania, AM Piro, S Di Marco, S Mirabella, F Simone, F Priolo

Biblio References: 
Volume: 520 Issue: 11 Pages: 4036-4040
Thin solid films