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In this paper we present a systematic study on the formation of He ion implantation induced nanovoids in Si and how they influence the self-interstitial (Is) supersaturation, thus affecting the diffusion and electrical activation of implanted boron in crystalline silicon. We implanted He ions into (100)-oriented Si wafers, with doses ranging from 5×1015to8×1016Heions∕cm2 and energies ranging from 25to110keV. Then, we implanted B ions (12keV, 5×1014ions∕cm2). All samples were annealed at 800°C in N2 atmosphere. We demonstrated the role of nanovoids in reducing B diffusion already at the first stages of postimplantation annealing. The effect has been attributed to the Is trapping by the nanovoids that forces B to assume a boxlike profile. Moreover, we studied the nanovoid distribution as a function of He-implanted dose and energy, demonstrating, by means of Cu gettering experiments, the beneficial effect of …
American Institute of Physics
Publication date: 
15 Jan 2007

E Bruno, S Mirabella, F Priolo, E Napolitani, C Bongiorno, V Raineri

Biblio References: 
Volume: 101 Issue: 2 Pages: 023515
Journal of applied physics