We report here a detailed study about the formation and self-organization of nanoscale structures during ion beam implantation at room temperature of 300 keV Ge+ in Ge as a function of the ion fluence in the range between 1×1014 to 4×1016 cm−2. “Microexplosions” characterize the morphology of the swelled material; a random cellular structure consisting of cells surrounded by amorphous Ge ripples has been observed and studied in details by combining atomic force microscopy, scanning electron microscopy, and transmission electron microscopy.
15 Apr 2010
Volume: 107 Issue: 8 Pages: 084314
Journal of Applied Physics