(Au nanocluster)/6H-SiC Schottky contacts were electrically characterized by conductive atomic force microscopy, collecting a high number of current-voltage (I-V) curves. The main observed result is the Schottky barrier height (SBH) dependence on the cluster size. The SBH increases from 1.35±0.01to1.77±0.01eV when the cluster size increases from 1.5to6.8nm and it tends, asymptotically, to the theoretical SBH of the macroscopic contact Au∕SiC (∼1.9eV). This behavior is interpreted considering the thermoionic transport theory through the Au cluster/SiC barrier coupled with the concept of ballistic transport within few electron quantum dots.
11 Dec 2006
Volume: 89 Issue: 24 Pages: 243113
Applied physics letters