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SALVO MIRABELLA (WoS Researcher ID: E-4672-2010) received his Laurea (1999) and PhD (2003) in Physics from University of Catania (Italy). Since 2003 he was a staff researcher at INFM-MATIS first and at CNR-IMM (Consiglio Nazionale delle Ricerche – Istituto per la Microelettronica e Microsistemi) later, being also an elected member of the IMM-Consiglio di Istituto. Since 2016, March, he moved to the University of Catania as Associate Professor in Experimental Condensed Matter Physics. Since 2000 Salvo contributed to almost 140 papers on ISE scientific journals in the field of microelectronics, photovoltaics and sensing, holding an H- factor of 26 and about 2000 citations (Google Scholar, 2016, June).
He wrote a review paper on invitation upon B diffusion mechanism, and holds one international patent on point-defect engineering. Along the way, he established scientific collaboration with some EU and USA research institutes and universities, he has been invited speaker, chairman and member of scientific committees at various international scientific conferences, participant of several national and EU research projects, referees for international scientific journals (Physical Review Letters, Applied Physics Letters, Journal of Applied Physics, Optics Express, Nanoscale, …), responsible for research tasks in scientific projects. He co-organized three international scientific conferences (IBMM2006, Symposium I at E-MRS Spring 2009, Symposium Y at E-MRS Spring 2014), being also co-Editor of the relative three Proceeding Books, edited by Elsevier (as special issues of: Nuclear Instruments and Methods B, Thin Solid Films and Elsevier Procedia). He co-edited a book (Nanotechnology and Photovoltaics Devices: Light Energy Harvesting with Group-IV Nanostructures) with Pan Standford Publishing (2014) and co-authored a chapter “Silicon and Germanium Nanocrystals” in a CRC (T&F group) book (Silicon, Germanium, and Their Alloys: Growth, Defects, Impurities, and Nanocrystals).
Scientific Productions
IEEE Sensors Journal [IEEE],
New insight into Pt nucleation mechanism on Si surface during galvanic displacement deposition
Journal of Physics and Chemistry of Solids [Pergamon], Volume: 148 Pages: 109722
Investigating the charge-discharge behaviour of Ni (OH) 2 nanowalls
Applied Surface Science [North-Holland], Volume: 534 Pages: 147585
Self‐Formed, Conducting LaAlO3/SrTiO3 Micro‐Membranes
Advanced Functional Materials [], Volume: 30 Issue: 45 Pages: 1909964
Role of Substrate in Au Nanoparticle Decoration by Electroless Deposition
Nanomaterials [Multidisciplinary Digital Publishing Institute], Volume: 10 Issue: 11 Pages: 2180
ACS Applied Materials & Interfaces [American Chemical Society], Volume: 12 Issue: 44 Pages: 50143-50151
High intrinsic activity of the oxygen evolution reaction in low-cost NiO nanowall electrocatalysts
Materials Advances [RSC], Volume: 1 Issue: 6 Pages: 1971-1979
arXiv preprint arXiv:2009.06900 [],
New insight into Pt nucleation mechanism on Si surface during galvanic displacement deposition
Journal of Physics and Chemistry of Solids [Pergamon], Pages: 109722
Investigation of WO3 Electrodeposition Leading to Nanostructured Thin Films
Nanomaterials [Multidisciplinary Digital Publishing Institute], Volume: 10 Issue: 8 Pages: 1493
Nanomaterials [Multidisciplinary Digital Publishing Institute], Volume: 10 Issue: 8 Pages: 1620
Acetone sensing and modelling by low-cost NiO nanowalls
Materials Letters [North-Holland], Volume: 262 Pages: 127043
Room temperature detection and modelling of sub-ppm NO2 by low-cost nanoporous NiO film
Sensors and Actuators B: Chemical [Elsevier], Volume: 305 Pages: 127481
High intrinsic activity of oxygen evolution reaction in low-cost NiO nanowalls electrocatalyst
Materials Advances [Royal Society of Chemistry],
Free carrier enhanced depletion in ZnO nanorods decorated with bimetallic AuPt nanoclusters
Nanoscale [Royal Society of Chemistry], Volume: 12 Issue: 37 Pages: 19213-19222
Materials Advances [Royal Society of Chemistry], Volume: 1 Issue: 7 Pages: 2542-2542
Nanoscale [Royal Society of Chemistry], Volume: 12 Issue: 30 Pages: 16162-16172
Chemosensors [Multidisciplinary Digital Publishing Institute], Volume: 7 Issue: 4 Pages: 62
Room temperature detection and modelling of sub-ppm NO2 by low-cost nanoporous NiO film
Sensors and Actuators B: Chemical [Elsevier], Pages: 127481
ACS omega [American Chemical Society], Volume: 4 Issue: 20 Pages: 18495-18501
Microscopic Model for pH Sensing Mechanism in Zinc-based Nanowalls
Sensors and Actuators B: Chemical [Elsevier], Volume: 296 Pages: 126614
Chemosensors [Multidisciplinary Digital Publishing Institute], Volume: 7 Issue: 2 Pages: 18
Scientific reports [Nature Publishing Group], Volume: 9 Issue: 1 Pages: 1-11
Nanoscale research letters [SpringerOpen], Volume: 13 Issue: 1 Pages: 1-9
Effect of laser annealing on ZnO nanorods grown by chemical bath deposition on flexible substrate
Applied Surface Science [North-Holland], Volume: 458 Pages: 800-804
Miniaturized and Multi-Purpose Electrochemical Sensing Device based on thin Ni Oxides
Sensors and Actuators B: Chemical [Elsevier], Volume: 263 Pages: 10-19
Stress Evolution of Ge Nanocrystals in Dielectric Matrices
Nanotechnology [IOP Publishing], Volume: 29 Issue: 18 Pages: 185704
Nanotechnology [IOP Publishing], Volume: 29 Issue: 16 Pages: 165601
Journal of Electroanalytical Chemistry [Elsevier], Volume: 811 Pages: 89-95
Low-cost synthesis of pure ZnO nanowalls showing three-fold symmetry
Nanotechnology [IOP Publishing], Volume: 29 Issue: 13 Pages: 135707
Low-cost synthesis of pure ZnO nanowalls showing three-fold symmetry
Nanotechnology [IOP Publishing],
Dalton Transactions [Royal Society of Chemistry],
Dalton Transactions [Royal Society of Chemistry], Volume: 47 Issue: 44 Pages: 15977-15982
Low-cost and facile synthesis of Ni (OH) 2/ZnO nanostructures for high-sensitivity glucose detection
Nanotechnology [IOP Publishing], Volume: 29 Issue: 1 Pages: 015502
Electrochemical Biosensor for PCR free Nucleic Acids Detection
Proceedings of the IEEE journal [],
Chemosensors [Multidisciplinary Digital Publishing Institute], Volume: 5 Issue: 3 Pages: 20
The Journal of Physical Chemistry C [American Chemical Society], Volume: 121 Issue: 29 Pages: 15644-15652
Role of AuxPt1-X Clusters in the Enhancement of Electrochemical Activity of ZnO Nanorods Electrodes
The Journal of Physical Chemistry C [American Chemical Society],
Optical bandgap of semiconductor nanostructures: Methods for experimental data analysis
Journal of Applied Physics [AIP Publishing LLC], Volume: 121 Issue: 23 Pages: 234304
Robustness and electrical reliability of AZO/Ag/AZO thin film after bending stress
Solar Energy Materials and Solar Cells [North-Holland], Volume: 165 Pages: 88-93
Formation, Morphology and Optical Properties of Electroless Deposited Gold Nanoparticles on 3C-SiC
The Journal of Physical Chemistry C [American Chemical Society], Volume: 121 Issue: 8 Pages: 4304-4311
A Miniaturized Electrochemical System Based on Nickel Oxide Species for Glucose Sensing Applications
Bionanoscience [Springer US], Volume: 7 Issue: 1 Pages: 58-63
Ion irradiation of AZO thin films for flexible electronics
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms [North-Holland], Volume: 392 Pages: 14-20
Beilstein journal of nanotechnology [Beilstein-Institut], Volume: 8 Issue: 1 Pages: 287-295
ACS applied materials & interfaces [American Chemical Society], Volume: 9 Issue: 1 Pages: 573-584
ACS applied materials & interfaces [American Chemical Society], Volume: 9 Issue: 1 Pages: 573-584
Plasma dynamics and cations off-stoichiometry in LaAlO3 films grown in high pressures regimes
Journal of Applied Physics [AIP Publishing LLC], Volume: 120 Issue: 22 Pages: 225306
Applied Physics Letters [AIP Publishing LLC], Volume: 109 Issue: 14 Pages: 143108
The role of Zn vacancies in UV sensing with ZnO nanorods
Applied Physics Letters [AIP Publishing LLC], Volume: 109 Issue: 14 Pages: 143104
Facile synthesis of Ni nanofoam for flexible and low-cost non-enzymatic glucose sensing
Sensors and Actuators B: Chemical [Elsevier], Volume: 224 Pages: 764-771
Universal model for defect-related visible luminescence in ZnO nanorods
RSC advances [Royal Society of Chemistry], Volume: 6 Issue: 77 Pages: 73170-73175
Nanoscale [Royal Society of Chemistry], Volume: 8 Issue: 2 Pages: 995-1006
Growth kinetics of colloidal Ge nanocrystals for light harvesters
RSC advances [Royal Society of Chemistry], Volume: 6 Issue: 44 Pages: 38454-38462
RSC advances [Royal Society of Chemistry], Volume: 6 Issue: 112 Pages: 111374-111379
Comment on “Diffusion of n-type dopants in germanium”[Appl. Phys. Rev. 1, 011301 (2014)]
Applied Physics Reviews [AIP Publishing LLC], Volume: 2 Issue: 3 Pages: 036101
Crystal Growth & Design [American Chemical Society], Volume: 15 Issue: 9 Pages: 4206-4212
AlN texturing and piezoelectricity on flexible substrates for sensor applications
Applied Physics Letters [AIP Publishing], Volume: 106 Issue: 23
Introduction to Photovoltaics and Potential Applications of Group IV Nanostructures
Nanotechnology and Photovoltaic Devices: Light Energy Harvesting with Group IV Nanostructures [CRC Press], Pages: 1
Electrical transport in Si-based nanostructured superlattices
Light Energy Harvesting with Group IV Nanostructures. Pan Stanford [], Pages: 255-316
Ge Nanostructures for Harvesting and Detection of Light
Nanotechnology and Photovoltaic Devices: Light Energy Harvesting with Group IV Nanostructures [CRC Press], Pages: 317
The Introduction of Majority Carriers into Group IV Nanocrystals
Nanotechnology and Photovoltaic Devices [Pan Stanford: Singapore], Pages: 203-254
The Dielectric Function and Spectrophotometry: From Bulk to Nanostructures
Nanotechnology and Photovoltaic Devices: Light Energy Harvesting with Group IV Nanostructures [CRC Press], Pages: 27
The Introduction of Majority Carriers into Group IV Nanocrystals
Nanotechnology and Photovoltaic Devices [Pan Stanford: Singapore], Pages: 203-254
Influence of interface potential on the effective mass in Ge nanostructures
Journal of Applied Physics [AIP Publishing LLC], Volume: 117 Issue: 15 Pages: 154304
Solar Energy Materials and Solar Cells [North-Holland], Volume: 135 Pages: 22-28
Applied Physics Letters [AIP Publishing LLC], Volume: 106 Issue: 9 Pages: 093108
Low-cost high-haze films based on ZnO nanorods for light scattering in thin c-Si solar cells
Applied Physics Letters [AIP Publishing LLC], Volume: 106 Issue: 1 Pages: 013901
Solar Energy Materials and Solar Cells [Elsevier], Volume: 135 Pages: 1
Nanoscale [Royal Society of Chemistry], Volume: 7 Issue: 26 Pages: 11401-11408
Ge Nanostructures for Harvesting and Detection of Light
Nanotechnology and Photovoltaic Devices: Light Energy Harvesting with Group IV Nanostructures [],
Silicon and Germanium Nanocrystals
Silicon, Germanium, and Their Alloys: Growth, Defects, Impurities, and Nanocrystals [CRC Press], Pages: 377
Double role of HMTA in ZnO nanorods grown by chemical bath deposition
The Journal of Physical Chemistry C [American Chemical Society], Volume: 118 Issue: 48 Pages: 28189-28195
TCO/Ag/TCO transparent electrodes for solar cells application
Applied Physics A [Springer Berlin Heidelberg], Volume: 116 Issue: 3 Pages: 1287-1291
Flexible pH sensors based on polysilicon thin film transistors and ZnO nanowalls
Applied physics letters [AIP Publishing LLC], Volume: 105 Issue: 9 Pages: 093501
ECS Transactions [The Electrochemical Society], Volume: 64 Issue: 10 Pages: 165-173
Flexible Sensors Based on Low-Temperature Polycrystalline Silicon Thin Film Transistor Technology
ECS Meeting Abstracts [IOP Publishing], Issue: 47 Pages: 1931
Flexible Sensors Based on Low-Temperature Polycrystalline Silicon Thin Film Transistor Technology
ECS Transactions [IOP Publishing], Volume: 64 Issue: 10 Pages: 165
Applied Physics A [Springer Berlin Heidelberg], Volume: 116 Issue: 1 Pages: 233-241
Broadband photocurrent enhancement in a-Si: H solar cells with plasmonic back reflectors
Optics express [Optical Society of America], Volume: 22 Issue: 104 Pages: A1059-A1070
Boron diffusion in nanocrystalline 3C-SiC
Applied Physics Letters [American Institute of Physics], Volume: 104 Issue: 21 Pages: 213108
Light harvesting with Ge quantum dots embedded in SiO {sub 2} or Si {sub 3} N {sub 4}
Journal of Applied Physics [], Volume: 115 Issue: 4
Light harvesting with Ge quantum dots embedded in SiO2 or Si3N4
Journal of Applied Physics [American Institute of Physics], Volume: 115 Issue: 4 Pages: 043103
Light harvesting with Ge quantum dots embedded in SiO2or Si3N4
Journal of Applied Physics [American Institute of Physics Publising LLC], Volume: 115
Energy Procedia [], Issue: 60 Pages: 1-2
Dielectric function and spectrophotometry: from bulk to nanostructures
Light Energy Harvesting with Group-IV Nanostructures, Pan Stanford Pub., Kyoto and Catania [],
Role of Ge nanoclusters in the performance of photodetectors compatible with Si technology
Thin Solid Films [Elsevier], Volume: 548 Pages: 551-555
Nanoscale research letters [SpringerOpen], Volume: 8 Issue: 1 Pages: 1-5
Room-temperature efficient light detection by amorphous Ge quantum wells
Nanoscale research letters [SpringerOpen], Volume: 8 Issue: 1 Pages: 1-7
Enhanced light scattering in Si nanostructures produced by pulsed laser irradiation
Applied Physics Letters [American Institute of Physics], Volume: 103 Issue: 22 Pages: 221902
Journal of Applied Physics [American Institute of Physics], Volume: 114 Issue: 18 Pages: 184311
Light absorption and conversion in solar cell based on Si: O alloy
Journal of Applied Physics [American Institute of Physics], Volume: 114 Issue: 5 Pages: 053507
Nanotechnology [IOP Publishing], Volume: 24 Issue: 26 Pages: 265601
Light absorption enhancement in closely packed Ge quantum dots
Applied Physics Letters [American Institute of Physics], Volume: 102 Issue: 19 Pages: 193105
Extended point defects in crystalline materials: Ge and Si
Physical review letters [American Physical Society], Volume: 110 Issue: 15 Pages: 155501
Challenges and opportunities for doping control in Ge for micro and optoelectronics applications
ECS Transactions [IOP Publishing], Volume: 50 Issue: 5 Pages: 89
ECS Transactions [The Electrochemical Society], Volume: 50 Issue: 5 Pages: 89-103
APPLIED PHYSICS REVIEWS—FOCUSED REVIEW
JOURNAL OF APPLIED PHYSICS [], Volume: 113 Pages: 031101
NANOTECHNOLOGY [], Volume: 24 Issue: 26 Pages: 265601
Journal of Applied Physics [American Institute of Physics], Volume: 112 Issue: 8 Pages: 083103
Matrix role in Ge nanoclusters embedded in Si3N4 or SiO2
Applied Physics Letters [American Institute of Physics], Volume: 101 Issue: 1 Pages: 011911
Role of self-interstitials on B diffusion in Ge
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms [North-Holland], Volume: 282 Pages: 8-11
Challenges and opportunities for doping control in Ge for micro and optoelectronics applications
Meeting Abstracts [The Electrochemical Society], Issue: 32 Pages: 2631-2631
Thin Solid Films [Elsevier], Volume: 520 Issue: 13 Pages: 4432-4435
Thin solid films [Elsevier], Volume: 520 Issue: 11 Pages: 4036-4040
Journal of Applied Physics [American Institute of Physics], Volume: 111 Issue: 4 Pages: 043510
Optical and electrical properties of Si nanocrystals embedded in SiC matrix
Adv. Mater. Lett [], Volume: 3 Issue: 4 Pages: 297-304
J. Appl. Phys [], Volume: 73706 Issue: 10.1063/1.4757406 Pages: 112
The role of the surfaces in the photon absorption in Ge nanoclusters embedded in silica
Nanoscale research letters [SpringerOpen], Volume: 6 Issue: 1 Pages: 1-7
Kinetics of large B clusters in crystalline and preamorphized silicon
Journal of Applied Physics [American Institute of Physics], Volume: 110 Issue: 7 Pages: 073524
Systematic characterization of silicon nanodot absorption for third generation photovoltaics
Proceedings of the 26th European Photovoltaic Solar Energy Conference, Hamburg, Germany [], Pages: 21-25
Effect of O Implantation in Crystalline Ge
ECS Meeting Abstracts [IOP Publishing], Issue: 32 Pages: 2146
Ge Quantum Dots Embedded in SiO2 or SiNx: Synthesis and Light Absorption
ECS Meeting Abstracts [IOP Publishing], Issue: 29 Pages: 2015
Self-interstitials injection in crystalline Ge induced by GeO 2 nanoclusters
Physical Review B [American Physical Society], Volume: 84 Issue: 2 Pages: 024104
High-efficiency silicon-compatible photodetectors based on Ge quantum dots
Applied Physics Letters [American Institute of Physics], Volume: 98 Issue: 22 Pages: 221107
Ion implantation damage and crystalline-amorphous transition in Ge
Applied Physics A [Springer-Verlag], Volume: 103 Issue: 2 Pages: 323-328
Optical properties of silicon rich oxides
physica status solidi c [WILEY‐VCH Verlag], Volume: 8 Issue: 3 Pages: 996-1001
Pascal and Francis Bibliographic Databases
enquête [], Volume: 2011
Light absorption and electrical transport in Si: O alloys for photovoltaics
Journal of Applied Physics [American Institute of Physics], Volume: 108 Issue: 9 Pages: 093507
Fluorine redistribution and incorporation during solid phase epitaxy of preamorphized Si
Physical Review B [American Physical Society], Volume: 82 Issue: 15 Pages: 155323
First and second-order Raman scattering in Si nanostructures within silicon nitride
Applied Physics Letters [American Institute of Physics], Volume: 97 Issue: 15 Pages: 153112
Recent Insights in the Diffusion of Boron in Silicon and Germanium
ECS Transactions [IOP Publishing], Volume: 33 Issue: 11 Pages: 167
(Invited) Recent Insights in the Diffusion of Boron in Silicon and Germanium
ECS Transactions [The Electrochemical Society], Volume: 33 Issue: 11 Pages: 167-178
Recent Insights in the Diffusion of B in Silicon and Germanium
ECS Meeting Abstracts [IOP Publishing], Issue: 23 Pages: 1569
Atomistic analysis of B clustering and mobility degradation in highly B‐doped junctions
International Journal of Numerical Modelling: Electronic Networks, Devices and Fields [John Wiley & Sons, Ltd.], Volume: 23 Issue: 4‐5 Pages: 266-284
Transient enhanced diffusion of B mediated by self-interstitials in preamorphized Ge
Applied Physics Letters [American Institute of Physics], Volume: 96 Issue: 20 Pages: 201906
Radiation enhanced diffusion of B in crystalline Ge
Thin Solid Films [Elsevier], Volume: 518 Issue: 9 Pages: 2386-2389
Formation and evolution of small B clusters in Si: Ion channeling study
Physical Review B [American Physical Society], Volume: 81 Issue: 7 Pages: 075210
Journal of Applied Physics [American Institute of Physics], Volume: 107 Issue: 4 Pages: 043503
Symposium I: Silicon and germanium issues for future CMOS devices
Thin Solid Films [], Volume: 518 Issue: 9 Pages: 2299-2300
Boron diffusion in extrinsically doped crystalline silicon
Physical Review B [American Physical Society], Volume: 81 Issue: 4 Pages: 045209
The role of the surfaces in the photon absorption in Ge nanoclusters embedded in silica
NANOSCALE RESEARCH LETTERS [], Volume: 6 Issue: 1 Pages: 1-7
Optical properties of silicon nanodots in SiC matrix
Proceedings of the 25th European Photovoltaic Solar Energy Conference and Exhibition, Valencia, Spain [], Pages: 662-666
Light absorption in silicon quantum dots embedded in silica
Journal of Applied Physics [American Institute of Physics], Volume: 106 Issue: 10 Pages: 103505
Formation and incorporation of SiF 4 molecules in F-implanted preamorphized Si
Applied Physics Letters [American Institute of Physics], Volume: 95 Issue: 10 Pages: 101908
Mechanism of B diffusion in crystalline Ge under proton irradiation
Physical Review B [American Physical Society], Volume: 80 Issue: 3 Pages: 033204
Ga-implantation in Ge: Electrical activation and clustering
Journal of Applied Physics [American Institute of Physics], Volume: 106 Issue: 1 Pages: 013518
He implantation induced nanovoids in crystalline Si
Materials Science and Engineering: B [Elsevier], Volume: 159 Pages: 164-167
B activation and clustering in ion-implanted Ge
Journal of applied Physics [American Institute of Physics], Volume: 105 Issue: 6 Pages: 063533
Materials Science and Engineering: B [Elsevier], Volume: 154 Pages: 247-251
B electrical activation in crystalline and preamorphized Ge
Materials Science and Engineering: B [Elsevier], Volume: 154 Pages: 56-59
Vacancy engineering by He induced nanovoids in crystalline Si
Semiconductor Science and Technology [IOP Publishing], Volume: 24 Issue: 1 Pages: 015005
Experimental investigations of boron diffusion mechanisms in crystalline and amorphous silicon
Materials Science and Engineering: B [Elsevier], Volume: 154 Pages: 240-246
Atomistic modeling of F n V m complexes in pre-amorphized Si
Materials Science and Engineering: B [Elsevier], Volume: 154 Pages: 207-210
Formation and evolution of F nanobubbles in amorphous and crystalline Si
Applied Physics Letters [American Institute of Physics], Volume: 93 Issue: 6 Pages: 061906
Role of C in the formation and kinetics of nanovoids induced by He+ implantation in Si
Journal of Applied Physics [American Institute of Physics], Volume: 104 Issue: 2 Pages: 023501
Activation and carrier mobility in high fluence B implanted germanium
Applied Physics Letters [AIP Publishing], Volume: 92 Issue: 25
Mechanism of boron diffusion in amorphous silicon
Physical review letters [American Physical Society], Volume: 100 Issue: 15 Pages: 155901
Journal of Physics: Condensed Matter [IOP Publishing], Volume: 20 Issue: 17 Pages: 175215
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena [American Vacuum Society], Volume: 26 Issue: 1 Pages: 382-385
He implantation to control B diffusion in crystalline and preamorphized Si
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena [American Vacuum Society], Volume: 26 Issue: 1 Pages: 386-390
Growth and characterization of Si nanodot multilayers in SiC matrix
Proceedings of the 23rd European Photovoltaic Solar Energy Conference [], Pages: 730-3
Indirect Diffusion Mechanism of Boron Atoms in Crystalline and Amorphous Silicon
MRS Online Proceedings Library (OPL) [Cambridge University Press], Volume: 1070
Indirect Diffusion Mechanism of Boron Atoms in Crystalline and Amorphous Silicon
MRS Online Proceedings Library Archive [Cambridge University Press], Volume: 1070
B Clustering in Amorphous Silicon
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY. B [], Volume: 26 Pages: 382-385
Fluorine counter doping effect in B-doped Si
Applied Physics Letters [American Institute of Physics], Volume: 91 Issue: 13 Pages: 132101
Applied Physics Letters [American Institute of Physics], Volume: 91 Issue: 3 Pages: 031905
Journal of applied physics [American Institute of Physics], Volume: 101 Issue: 10 Pages: 103508
Substitutional B in Si: Accurate lattice parameter determination
Journal of applied physics [American Institute of Physics], Volume: 101 Issue: 9 Pages: 093523
He implantation in Si for B diffusion control
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms [North-Holland], Volume: 257 Issue: 1-2 Pages: 181-185
Physical insight into the phenomenon of B clustering in Si at room temperature
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms [North-Holland], Volume: 257 Issue: 1-2 Pages: 146-151
Iso-concentration study of atomistic mechanism of B diffusion in Si
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms [North-Holland], Volume: 257 Issue: 1-2 Pages: 165-168
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms [North-Holland], Volume: 257 Issue: 1-2 Pages: 270-274
Carrier concentration and mobility profiling in quantum wells by scanning probe microscopy
Microelectronic engineering [Elsevier], Volume: 84 Issue: 3 Pages: 446-449
He induced nanovoids for point-defect engineering in B-implanted crystalline Si
Journal of applied physics [American Institute of Physics], Volume: 101 Issue: 2 Pages: 023515
Atomistic mechanism of boron diffusion in silicon
Physical review letters [American Physical Society], Volume: 97 Issue: 25 Pages: 255902
Experimental evidence of B clustering in amorphous Si during ultrashallow junction formation
Applied physics letters [American Institute of Physics], Volume: 89 Issue: 24 Pages: 241901
B diffusion and activation phenomena during post-annealing of C co-implanted ultra-shallow junctions
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms [North-Holland], Volume: 253 Issue: 1-2 Pages: 46-49
Lattice strain of B–B pairs formed by He irradiation in crystalline Si 1− x B x/Si
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms [North-Holland], Volume: 253 Issue: 1-2 Pages: 55-58
Point defect engineering in preamorphized silicon enriched with fluorine
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms [North-Holland], Volume: 253 Issue: 1-2 Pages: 94-99
Evidences of F-induced nanobubbles as sink for self-interstitials in Si
Applied physics letters [American Institute of Physics], Volume: 89 Issue: 17 Pages: 171916
Fluorine in preamorphized Si: Point defect engineering and control of dopant diffusion
Journal of applied physics [American Institute of Physics], Volume: 99 Issue: 10 Pages: 103510
Role of surface nanovoids on interstitial trapping in He implanted crystalline Si
Applied physics letters [American Institute of Physics], Volume: 88 Issue: 19 Pages: 191910
Lattice strain induced by boron clusters in crystalline silicon
Semiconductor science and technology [IOP Publishing], Volume: 21 Issue: 6 Pages: L41
Size effects on the electrical activation of low-energy implanted B in Si
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena [American Vacuum Society], Volume: 24 Issue: 1 Pages: 468-472
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena [American Vacuum Society], Volume: 24 Issue: 1 Pages: 394-398
Fluorine incorporation in preamorphized silicon
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena [American Vacuum Society], Volume: 24 Issue: 1 Pages: 433-436
Scanning capacitance microscopy: Quantitative carrier profiling down to nanostructures
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena [American Vacuum Society], Volume: 24 Issue: 1 Pages: 370-374
Drift mobility in quantum nanostructures by scanning probe microscopy
Applied physics letters [American Institute of Physics], Volume: 88 Issue: 4 Pages: 043117
Journal of Vacuum Science and Technology-Section B [Woodbury, NY: Published for the Society by the American Institute of Physics, 1991-], Volume: 24 Issue: 1 Pages: 468-472
Fluorine incorporation during Si solid phase epitaxy
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms [North-Holland], Volume: 242 Issue: 1-2 Pages: 614-616
Journal of Vacuum Science and Technology-Section B [Woodbury, NY: Published for the Society by the American Institute of Physics, 1991-], Volume: 24 Issue: 1 Pages: 394-398
Atomistic mechanism of B diffusion in Si
PHYSICAL REVIEW LETTERS [], Volume: 97 Pages: 255902
Journal of Vacuum Science and Technology-Section B [Woodbury, NY: Published for the Society by the American Institute of Physics, 1991-], Volume: 24 Issue: 1 Pages: 433-436
Role of Si self-interstitials on the electrical de-activation of B doped Si
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms [North-Holland], Volume: 242 Issue: 1-2 Pages: 656-658
Dissolution kinetics of B clusters in crystalline Si
Materials Science and Engineering: B [Elsevier], Volume: 124 Pages: 32-38
Submicron confinement effect on electrical activation of B implanted in Si
Materials Science and Engineering: B [Elsevier], Volume: 124 Pages: 257-260
B implanted at room temperature in crystalline Si: B defect formation and dissolution
Materials Science and Engineering: B [Elsevier], Volume: 124 Pages: 253-256
Materials Science and Engineering: B [Elsevier], Volume: 124 Pages: 54-61
Boron lattice location in room temperature ion implanted Si crystal
Materials Science and Engineering: B [Elsevier], Volume: 124 Pages: 249-252
Experimental evidences for two paths in the dissolution process of B clusters in crystalline Si
Applied Physics Letters [American Institute of Physics], Volume: 87 Issue: 22 Pages: 221902
Lattice location and thermal evolution of small B complexes in crystalline Si
Applied Physics Letters [American Institute of Physics], Volume: 87 Issue: 20 Pages: 201905
B activation enhancement in submicron confined implants in Si
Applied Physics Letters [American Institute of Physics], Volume: 87 Issue: 13 Pages: 133110
Fluorine in Si: Native-defect complexes and the suppression of impurity diffusion
Physical Review B [American Physical Society], Volume: 72 Issue: 4 Pages: 045219
Journal of Physics: Condensed Matter [IOP Publishing], Volume: 17 Issue: 22 Pages: S2273
Interaction between implanted fluorine atoms and point defects in preamorphized silicon
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms [North-Holland], Volume: 230 Issue: 1-4 Pages: 220-224
Fluorine segregation and incorporation during solid-phase epitaxy of Si
Applied Physics Letters [American Institute of Physics], Volume: 86 Issue: 12 Pages: 121905
Room-temperature boron displacement in crystalline silicon induced by proton irradiation
Applied physics letters [American Institute of Physics], Volume: 86 Issue: 8 Pages: 081906
Dry oxidation of MBE-SiGe films: rate enhancement, Ge redistribution and defect injection
Materials science in semiconductor processing [Pergamon], Volume: 8 Issue: 1-3 Pages: 219-224
Experimental evidences for two paths in the dissolution process of B clusters in crystalline silicon
APPLIED PHYSICS LETTERS [], Volume: 87 Pages: 221902-1-3
Carrier distribution in quantum nanostructures by scanning capacitance microscopy
Journal of applied physics [American Institute of Physics], Volume: 97 Issue: 1 Pages: 014302
2018 IEEE 4th International Forum on Research and Technology for Society and Industry (RTSI) [IEEE], Pages: 1-6
Nickel Based Biosensor for Biomolecules Recognition
Convegno Nazionale Sensori [Springer, Cham], Pages: 105-109
2017 European Conference on Circuit Theory and Design (ECCTD) [IEEE], Pages: 1-4
2017 European Conference on Circuit Theory and Design (ECCTD) [IEEE], Pages: 1-4
A nanostructured Zn (II) Schiff-base complex for chemoresistive sensing of volatile amines
Symposium V-Design and hierarchical assemblies of nanomaterials (nanoparticles, carbon materials, molecules) towards energy, sensing, electronic, catalysis and detection applications [], Pages: V. 3.7.
A Vapochromic and Chemoresistive Molecular Material for Sensing Volatile Amines
Materials 2016 [], Pages: 83-84
Nanostructured sensing devices controlled by ultra-flexible polysilicon readout circuits
2015 IEEE 15th International Conference on Environment and Electrical Engineering (EEEIC) [IEEE], Pages: 1770-1773
ZnO nanowalls integrated on ultra-thin flexible TFT based on polysilicon for pH sensing
2014 IEEE 9th Nanotechnology Materials and Devices Conference (NMDC) [IEEE], Pages: 41-44
LTPS TFT technology on flexible substrates for sensor applications
2014 21st International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) [IEEE], Pages: 311-314
Photocurrent enhancement in thin a-Si: H solar cells via plasmonic light trapping
CLEO: Science and Innovations [Optical Society of America], Pages: STh3I. 4
Synthesis and Light Absorption Mechanism in Si or Ge Nanoclusters for Photovoltaics Applications
Solid State Phenomena [Trans Tech Publications Ltd], Volume: 205 Pages: 465-474
Fast, high-efficiency Germanium quantum dot photodetectors
2012 Lester Eastman Conference on High Performance Devices (LEC) [IEEE], Pages: 1-3
Si: O Alloys for Photovoltaics: Optical and Electrical Properties from Quantum Dots to Thin Films
ECS Meeting [],
Food safety in developing countries using no technology: the Wagashi study case
JOURNAL OF DAIRY SCIENCE [ELSEVIER SCIENCE INC], Volume: 93 Pages: 46-46
Carrier mobility degradation in highly B-doped junctions
2009 Spanish Conference on Electron Devices [IEEE], Pages: 34-37
Effect of He Induced Nanovoid on B Implanted in Si: The Microscopic Mechanism
2007 15th International Conference on Advanced Thermal Processing of Semiconductors [IEEE], Pages: 105-110
Boron Diffusion and Electrical Activation in Pre-Amorphized Si Enriched with Fluorine
2007 15th International Conference on Advanced Thermal Processing of Semiconductors [IEEE], Pages: 81-85
Effect of He induced nanovoid on B implanted in Si: The microscopic mechanism
15th IEEE International Conference on Advanced Thermal Processing of Semiconductors [Vittorio Privitera IMM-CNR],
Low temperature B clustering formation, growth and dissolution
European Materials Research Society Spring Meeting 2006 [E-MRS], Pages: U III-2-U III-2
Roughness evolution in the amorphous-crystalline interface during solid phase epitaxy of SiGe films
European Materials Research Society Spring Meeting 2006 [E-MRS], Pages: xxx-xxx
17th International Conference on Ion Beam Analyses 2005 [IBA], Pages: xxx-xxx
Solid State Phenomena [Trans Tech Publications Ltd], Volume: 108 Pages: 395-400
Formation And Dissolution of B clusters in ion implanted material
European Materials Research Society Spring Meeting 2005 [EMRS], Pages: D/PII. 13-D/PII. 13
Electrical Transport in Si-Based Nanostructured Superlattices
Nanotechnology and Photovoltaic Devices [Pan Stanford], Pages: 264-325
Nanotechnology and Photovoltaic Devices: Light Energy Harvesting with Group IV Nanostructures
[CRC Press],
Ge Nanostructures for Harvesting and Detection of Light
Nanotechnology and Photovoltaic Devices [Pan Stanford], Pages: 326-362
Introduction to Photovoltaics and Potential Applications of Group IV Nanostructures
Nanotechnology and Photovoltaic Devices: Light Energy Harvesting with Group IV Nanostructures [Pan Stanford], Pages: 1-25
Carrier Multiplication in Isolated and Interacting Silicon Nanocrystals
Nanotechnology and Photovoltaic Devices: Light Energy Harvesting with Group IV Nanostructures [Pan Stanford], Pages: 177-202
Ge nanostructures for harvesting and detection of light
Nanotechnology and Photovoltaic Devices: Light Energy Harvesting with Group IV Nanostructures [], Pages: 317-353
Carrier distribution in quantum nanostructures studied by scanning capacitance microscopy
Microscopy of Semiconducting Materials [Springer, Berlin, Heidelberg], Pages: 487-490