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Giuliana Impellizzeri has a permanent position as Senior Researcher at the IMM-CNR. She obtained the Master Degree in Physics (110/110 cum laude) from the University of Catania in 2000. She worked as "Device Engineer" at STMicroelectronics for 20 months. She attained the Ph.D. in Physics (cum laude) from the University of Catania in 2004. She is author of more than 160 papers in international refereed journals. She is Editor of 14 Special Issues of Materials Science in Semiconductor Processing (Elsevier), and 1 volume of Nuclear Instruments and Methods in Physics Research Section B (Elsevier). She is author of 1 book chapter, editor of 2 book, author of 1 national and international patent. She gave numerous oral contributions to international conferences; she held 10 invited presentations and 2 invited keynote. She organized several conferences, including 3 symposia at the E-MRS Spring Meeting (Lille, May 2015; Strasbourg, May 2017; Nice, May 2019), the IEEE Nanotechnology Materials and Device Conference (Aci Castello, October 2014) and the NanoSEA conference (Giardini Naxos, July 2016) as Chair of the Organizing Committee. She participated to many national and international projects with the role of work package leader and unit coordinator. She is head of the WATER laboratory with, among other equipment, an ALD and a CVD for carbon-based materials. She has the licence for Full Professor in Italy. She was Member of the Board of the IMM. On April 2016 she was awarded by the President of the CNR (Prof. Luigi Nicolais) with the prize “Marcello Sgarlata” for the excellence of her research. She is a project evaluator for the European Commission and for the Italian Minister of Education. She is Editor of Materials Science in Semiconductor Processing journal IF=3.085 (Elsevier), and Associated Editor of Frontiers in Chemistry: Photocatalysis and Related Photochemistry IF=3.782 (Frontiers). She currently holds a H-index of 30 (source: Scopus).
Scientific Productions
ZnO–MoS2-PMMA polymeric nanocomposites: A harmless material for water treatment
Materials Today Chemistry [Elsevier], Volume: 36 Pages: 101912
H2 production by solar photoreforming of plastic materials using SiC-g-C3N4composites
Catalysis Communications [Elsevier], Volume: 187 Pages: 106850
Evaluation of Environmental Hazards of Nanocomposite Use for Wastewater Treatment
Proceedings [MDPI], Volume: 92 Issue: 1 Pages: 71
Green synthesis of photocatalytic TiO2/Ag nanoparticles for an efficient water remediation
Journal of Photochemistry and Photobiology A: Chemistry [Elsevier], Volume: 443 Pages: 114838
Titanium Dioxide Nanoparticles: Effects on Development and Male Reproductive System
Nanomaterials [MDPI], Volume: 13 Issue: 11 Pages: 1783
Laser crystallization of amorphous TiO2 on polymer
Materials Science in Semiconductor Processing [Pergamon], Volume: 157 Pages: 107328
Journal of Marine Science and Engineering [Multidisciplinary Digital Publishing Institute], Volume: 11 Issue: 2 Pages: 380
Applied Surface Science [North-Holland], Volume: 596 Pages: 153641
Materials Chemistry and Physics [Elsevier], Volume: 272 Pages: 124986
Journal of Photochemistry and Photobiology A: Chemistry [Elsevier], Pages: 113258
Artemia salina: A microcrustacean to assess engineered nanoparticles toxicity
Microscopy Research and Technique [John Wiley & Sons, Inc.], Volume: 84 Issue: 3 Pages: 531-536
Suitability of Different Titanium Dioxide Nanotube Morphologies for Photocatalytic Water Treatment
Nanomaterials [Multidisciplinary Digital Publishing Institute], Volume: 11 Issue: 3 Pages: 708
Synthesis and Photochemical Properties of Monolithic TiO2 Nanowires Diode
Molecules [Multidisciplinary Digital Publishing Institute], Volume: 26 Issue: 12 Pages: 3636
Materials Science in Semiconductor Processing [Pergamon], Volume: 118 Pages: 105214
Ecotoxicology and Environmental Safety [Academic Press], Volume: 200 Pages: 110772
Ag/ZnO/PMMA nanocomposites for an efficient water reuse
ACS Applied Bio Materials [American Chemical Society], Volume: 3 Issue: 7 Pages: 4417-4426
Materials Science in Semiconductor Processing [Pergamon], Volume: 112 Pages: 105019
p-type doping of Ge by Al ion implantation and pulsed laser melting
Applied Surface Science [North-Holland], Volume: 509 Pages: 145230
p-type doping of Ge by Al ion implantation and pulsed laser melting
Applied Surface Science [North-Holland], Volume: 509 Pages: 145230
Ex-situ doping of epitaxially grown Ge on Si by ion-implantation and pulsed laser melting
Applied Surface Science [North-Holland], Volume: 509 Pages: 145277
Microscopy research and technique [John Wiley & Sons, Inc.], Volume: 83 Issue: 4 Pages: 332-337
Microscopy Research and Technique [John Wiley & Sons, Inc.], Volume: 83 Issue: 4 Pages: 332-337
CeO2 for Water Remediation: Comparison of Various Advanced Oxidation Processes
Catalysts [Multidisciplinary Digital Publishing Institute], Volume: 10 Issue: 4 Pages: 446
Microscopy research and technique [John Wiley & Sons, Inc.], Volume: 83 Issue: 3 Pages: 297-303
Microscopy Research and Technique [John Wiley & Sons, Inc.], Volume: 83 Issue: 3 Pages: 297-303
Preferential removal of pesticides from water by molecular imprinting on TiO2 photocatalysts
Chemical Engineering Journal [Elsevier], Volume: 379 Pages: 122309
Microscopy research and technique [John Wiley & Sons, Inc.], Volume: 82 Issue: 8 Pages: 1297-1301
Selective photodegradation of 2, 4-D pesticide from water by molecularly imprinted TiO2
Journal of Photochemistry and Photobiology A: Chemistry [Elsevier], Volume: 380 Pages: 111872
Scientific reports [Nature Publishing Group], Volume: 9 Issue: 1 Pages: 1-14
Journal of colloid and interface science [Academic Press], Volume: 533 Pages: 369-374
Photocatalytic Materials for Energy and Environment Preface
Catalysis Today [Elsevier Science BV, Amsterdam, Netherlands], Volume: 321 Pages: 1-1
Selective photodegradation of paracetamol by molecularly imprinted ZnO nanonuts
Applied Catalysis B: Environmental [Elsevier], Volume: 238 Pages: 509-517
ZnO-pHEMA Nanocomposites: an Eco-friendly and Reusable Material for Water Remediation
ACS applied materials & interfaces [American Chemical Society], Volume: 10 Issue: 46 Pages: 40100-40110
Journal of Colloid and Interface Science [Academic Press],
Polymeric platform for the growth of chemically anchored ZnO nanostructures by ALD
RSC advances [Royal Society of Chemistry], Volume: 8 Issue: 1 Pages: 521-530
EVALUATION OF CHRONIC NANOSILVER TOXICITY TO ADULT ZEBRAFISH
Frontiers in physiology [Frontiers], Volume: 8 Pages: 1011
Functional nanomaterials for water purification
La Rivista del Nuovo Cimento [Società Italiana di Fisica], Volume: 40 Pages: 595-632
Room Temperature ferromagnetism in low dose ion implanted counter-doped Ge: Mn, As
Physica B: Condensed Matter [North-Holland], Volume: 523 Pages: 1-5
Sb-implanted ZnO ultra-thin films
Materials Science in Semiconductor Processing [Pergamon], Volume: 69 Pages: 32-35
Applied Surface Science [North-Holland], Volume: 416 Pages: 885-890
Liquid-Phase Monolayer Doping of InGaAs with Si-, S-, and Sn-Containing Organic Molecular Layers
ACS omega [American Chemical Society], Volume: 2 Issue: 5 Pages: 1750-1759
Applied Surface Science [North-Holland], Volume: 399 Pages: 451-462
ZnO for application in photocatalysis: From thin films to nanostructures
Materials Science in Semiconductor Processing [Pergamon],
RSC Advances [The Royal Society of Chemistry], Volume: 7 Issue: 19 Pages: 11222-11222
Optical and photocatalytic properties of TiO2 nanoplumes
Beilstein journal of nanotechnology [Beilstein-Institut], Volume: 8 Issue: 1 Pages: 190-195
Novel synthesis of ZnO/PMMA nanocomposites for photocatalytic applications
Scientific reports [Nature Publishing Group], Volume: 7 Issue: 1 Pages: 1-12
Applied Physics Letters [AIP Publishing LLC], Volume: 110 Issue: 1 Pages: 011905
RSC ADVANCES [ROYAL SOC CHEMISTRY], Volume: 7 Issue: 19 Pages: 11222-11222
ZnO nanorods grown on ultrathin ZnO seed layers: Application in water treatment
Journal of Photochemistry and Photobiology A: Chemistry [], Volume: 332 Pages: 497-504
Sb-implanted ZnO ultra-thin films
Materials Science in Semiconductor Processing [Pergamon],
Laser annealing in Si and Ge: Anomalous physical aspects and modeling approaches
Materials Science in Semiconductor Processing [Pergamon],
Low temperature atomic layer deposition of ZnO: Applications in photocatalysis
Applied Catalysis B: Environmental [Elsevier], Volume: 196 Pages: 68-76
Applied Physics Letters [AIP Publishing LLC], Volume: 109 Issue: 18 Pages: 182107
RSC advances [The Royal Society of Chemistry], Volume: 6 Issue: 60 Pages: 55490-55498
Journal of Photochemistry and Photobiology A: Chemistry [Elsevier], Volume: 321 Pages: 1-11
Toxicity Evaluation of New Engineered Nanomaterials in Zebrafish
Frontiers in physiology [Frontiers], Volume: 7 Pages: 130
Rapid synthesis of photoactive hydrogenated TiO 2 nanoplumes
Applied Catalysis B: Environmental [Elsevier], Volume: 183 Pages: 328-334
Photocatalytic activity of CuO and Cu 2 O nanowires
Materials Science in Semiconductor Processing [Pergamon], Volume: 42 Pages: 89-93
Photocatalytic activity of CuO and Cu2O nanowires
Materials Science in Semiconductor Processing [Pergamon], Volume: 42 Pages: 89-93
Synthesis of ZnO nanofibers by the electrospinning process
Materials Science in Semiconductor Processing [Pergamon], Volume: 42 Pages: 98-101
Nanostructured CdO thin films for water treatments
Materials Science in Semiconductor Processing [Pergamon], Volume: 42 Pages: 85-88
Oxygen behavior in germanium during melting laser thermal annealing
Materials Science in Semiconductor Processing [Pergamon], Volume: 42 Pages: 196-199
Photocatalytic and antibacterial properties of titanium dioxide flat film
Materials Science in Semiconductor Processing [Pergamon], Volume: 42 Pages: 32-35
TiO 2 nanowires on Ti thin film for water purification
Materials Science in Semiconductor Processing [Pergamon], Volume: 42 Pages: 24-27
Impurity and defect interactions during laser thermal annealing in Ge
Journal of Applied Physics [], Volume: 119 Issue: 4
Impurity and defect interactions during laser thermal annealing in Ge
Journal of Applied Physics [AIP Publishing LLC], Volume: 119 Issue: 4 Pages: 045702
RSC Advances, DOI: 10.1039/c6ra15986a [], Volume: 6 Pages: 91121-91126
RSC advances [Royal Society of Chemistry], Volume: 6 Issue: 91 Pages: 88886-88895
Chapter Three-Ion Implantation Defects and Shallow Junctions in Si and Ge
Semiconductors and Semimetals [Elsevier], Volume: 91 Pages: 93-122
Effect of Pt nanoparticles on the photocatalytic activity of ZnO nanofibers
Nanoscale research letters [SpringerOpen], Volume: 10 Issue: 1 Pages: 1-7
Crystal Growth & Design [American Chemical Society], Volume: 15 Issue: 9 Pages: 4206-4212
Optical Properties of Nanoporous Germanium Thin Films
ACS applied materials & interfaces [American Chemical Society], Volume: 7 Issue: 31 Pages: 16992-16998
C ion-implanted TiO2 thin film for photocatalytic applications
Journal of Applied Physics [AIP Publishing LLC], Volume: 117 Issue: 10 Pages: 105308
UV-black rutile TiO2: An antireflective photocatalytic nanostructure
Journal of Applied Physics [AIP Publishing LLC], Volume: 117 Issue: 7 Pages: 074903
Thermodynamic stability of high phosphorus concentration in silicon nanostructures
Nanoscale [Royal Society of Chemistry], Volume: 7 Issue: 34 Pages: 14469-14475
Toxic effects caused by a long-term exposure of Danio rerio to TiO2 nanoparticles.
Front. Mar. Sci. Conf. Abstr. XV Eur. Congr. Ichthyol. doi: 10.3389/conf. FMARS [], Volume: 139
TiO2-coated nanostructures for dye photo-degradation in water
Nanoscale research letters [SpringerOpen], Volume: 9 Issue: 1 Pages: 1-7
Visible and infrared emission from Si/Ge nanowires synthesized by metal-assisted wet etching
Nanoscale research letters [SpringerOpen], Volume: 9 Issue: 1 Pages: 1-7
Fe ion-implanted TiO2 thin film for efficient visible-light photocatalysis
Journal of Applied Physics [AIP Publishing LLC], Volume: 116 Issue: 17 Pages: 173507
Surface and Interface Analysis [], Volume: 46 Issue: S1 Pages: 393-396
Optoelectronic properties of nanoporous Ge layers investigated by surface photovoltage spectroscopy
Microporous and mesoporous materials [Elsevier], Volume: 196 Pages: 175-178
The Journal of Physical Chemistry C [American Chemical Society], Volume: 118 Issue: 27 Pages: 15019-15026
Components of strong magnetoresistance in Mn implanted Ge
Journal of Applied Physics [American Institute of Physics], Volume: 115 Issue: 9 Pages: 093703
N-type doping of Ge by As implantation and excimer laser annealing
Journal of Applied Physics [American Institute of Physics], Volume: 115 Issue: 5 Pages: 053501
Journal of Raman Spectroscopy [], Volume: 45 Issue: 2 Pages: 197-201
Role of oxygen on the electrical activation of B in Ge by excimer laser annealing
physica status solidi (a) [], Volume: 211 Issue: 1 Pages: 122-125
MINERVA CHIRURGICA [], Volume: 69 Issue: 2 Pages: 119-124
Nanoscale [Royal Society of Chemistry], Volume: 6 Issue: 19 Pages: 11189-11195
Defect complexes in fluorine-implanted germanium
Journal of Physics D: Applied Physics [IOP Publishing], Volume: 46 Issue: 50 Pages: 505310
Investigation of germanium implanted with aluminum by multi-laser micro-Raman spectroscopy
Thin Solid Films [Elsevier], Volume: 541 Pages: 76-78
Doping dependence of self-diffusion in germanium and the charge states of vacancies
Applied Physics Letters [American Institute of Physics], Volume: 102 Issue: 24 Pages: 242103
Nanoporous Ge coated by Au nanoparticles for electrochemical application
Electrochemistry communications [Elsevier], Volume: 30 Pages: 83-86
Journal of Raman Spectroscopy [], Volume: 44 Issue: 5 Pages: 665-669
Applied Physics Express [IOP Publishing], Volume: 6 Issue: 4 Pages: 042404
Influence of microstructure on voids nucleation in nanoporous Ge
Materials Letters [North-Holland], Volume: 96 Pages: 74-77
B-doping in Ge by excimer laser annealing
Journal of Applied Physics [American Institute of Physics], Volume: 113 Issue: 11 Pages: 113505
p-type conduction in ion-implanted amorphized Ge
Materials science in semiconductor processing [Pergamon], Volume: 15 Issue: 6 Pages: 703-706
Advanced characterization of carrier profiles in germanium using micro-machined contact probes
AIP Conference Proceedings [American Institute of Physics], Volume: 1496 Issue: 1 Pages: 167-170
Role of the Ge surface during the end of range dissolution
Applied Physics Letters [American Institute of Physics], Volume: 101 Issue: 16 Pages: 162103
Nanoporous Ge electrode as a template for nano-sized (< 5 nm) Au aggregates
Nanotechnology [IOP Publishing], Volume: 23 Issue: 39 Pages: 395604
Applied Physics Letters [American Institute of Physics], Volume: 101 Issue: 10 Pages: 103113
Role of F on the Electrical Activation of As in Ge
ECS Journal of Solid State Science and Technology [IOP Publishing], Volume: 1 Issue: 3 Pages: Q44
Fluorine in Ge: Segregation and EOR-defects stabilization
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms [North-Holland], Volume: 282 Pages: 21-24
Nanoporosity induced by ion implantation in deposited amorphous Ge thin films
Journal of Applied Physics [American Institute of Physics], Volume: 111 Issue: 11 Pages: 113515
Nanoporosity induced by ion implantation in germanium thin films grown by molecular beam epitaxy
Applied Physics Express [IOP Publishing], Volume: 5 Issue: 3 Pages: 035201
Structural, Electronic, and Electrical Properties of Y-Doped Cd2SnO4
The Journal of Physical Chemistry C [American Chemical Society], Volume: 116 Issue: 5 Pages: 3363-3368
Aluminium implantation in germanium: uphill diffusion, electrical activation, and trapping
Applied Physics Express [IOP Publishing], Volume: 5 Issue: 2 Pages: 021301
Materials Science in Semiconductor Processing [Elsevier], Volume: 15 Issue: 6 Pages: 587-587
New Aspects of Si-and Ge-based Materials and Devices
Materials science in semiconductor processing [], Volume: 15 Issue: 6
Fluorine effect on As diffusion in Ge
Journal of Applied Physics [American Institute of Physics], Volume: 109 Issue: 11 Pages: 113527
Ion implantation damage and crystalline-amorphous transition in Ge
Applied Physics A [Springer-Verlag], Volume: 103 Issue: 2 Pages: 323-328
Room-temperature ferromagnetism in Mn-implanted amorphous Ge
Physical Review B [American Physical Society], Volume: 83 Issue: 13 Pages: 134426
FATTORI PREDISPONENTI E TRATTAMENTO DELL'OCLUSIONE INTESTINALE DA SINDROME ADERENZIALE
ACTA CHIRURGICA MEDITERRANEA [], Volume: 26 Pages: 33-38
Fluorine redistribution and incorporation during solid phase epitaxy of preamorphized Si
Physical Review B [American Physical Society], Volume: 82 Issue: 15 Pages: 155323
(Invited) Recent Insights in the Diffusion of Boron in Silicon and Germanium
ECS Transactions [The Electrochemical Society], Volume: 33 Issue: 11 Pages: 167-178
Recent Insights in the Diffusion of Boron in Silicon and Germanium
ECS Transactions [IOP Publishing], Volume: 33 Issue: 11 Pages: 167
Recent Insights in the Diffusion of B in Silicon and Germanium
ECS Meeting Abstracts [IOP Publishing], Issue: 23 Pages: 1569
Substitutional and clustered B in ion implanted Ge: Strain determination
Journal of Applied Physics [American Institute of Physics], Volume: 107 Issue: 10 Pages: 103512
Journal of Physics: Condensed Matter [IOP Publishing], Volume: 22 Issue: 21 Pages: 216006
Nanostructuring in Ge by self-ion implantation
Journal of Applied Physics [AIP Publishing], Volume: 107 Issue: 8
Radiation enhanced diffusion of B in crystalline Ge
Thin Solid Films [Elsevier], Volume: 518 Issue: 9 Pages: 2386-2389
Boron diffusion in extrinsically doped crystalline silicon
Physical Review B [American Physical Society], Volume: 81 Issue: 4 Pages: 045209
Magneto-optical spectra of Mn-Ge films
Journal of Physics: Conference Series [IOP Publishing], Volume: 200 Issue: 7 Pages: 072079
Formation and incorporation of SiF 4 molecules in F-implanted preamorphized Si
Applied Physics Letters [American Institute of Physics], Volume: 95 Issue: 10 Pages: 101908
Mechanism of B diffusion in crystalline Ge under proton irradiation
Physical Review B [American Physical Society], Volume: 80 Issue: 3 Pages: 033204
Ga-implantation in Ge: Electrical activation and clustering
Journal of Applied Physics [American Institute of Physics], Volume: 106 Issue: 1 Pages: 013518
B activation and clustering in ion-implanted Ge
Journal of applied Physics [American Institute of Physics], Volume: 105 Issue: 6 Pages: 063533
B electrical activation in crystalline and preamorphized Ge
Materials Science and Engineering: B [Elsevier], Volume: 154 Pages: 56-59
Experimental investigations of boron diffusion mechanisms in crystalline and amorphous silicon
Materials Science and Engineering: B [Elsevier], Volume: 154 Pages: 240-246
Surface chemistry study of Mn-doped germanium nanowires
Applied surface science [North-Holland], Volume: 254 Issue: 24 Pages: 8093-8097
Formation and evolution of F nanobubbles in amorphous and crystalline Si
Applied Physics Letters [American Institute of Physics], Volume: 93 Issue: 6 Pages: 061906
Activation and carrier mobility in high fluence B implanted germanium
Applied Physics Letters [AIP Publishing], Volume: 92 Issue: 25
Indirect Diffusion Mechanism of Boron Atoms in Crystalline and Amorphous Silicon
MRS Online Proceedings Library Archive [Cambridge University Press], Volume: 1070
Indirect Diffusion Mechanism of Boron Atoms in Crystalline and Amorphous Silicon
MRS Online Proceedings Library (OPL) [Cambridge University Press], Volume: 1070
Electrical and structural characterization of Fe implanted GaInP
Physica B: Condensed Matter [North-Holland], Volume: 401 Pages: 278-281
Fluorine counter doping effect in B-doped Si
Applied Physics Letters [American Institute of Physics], Volume: 91 Issue: 13 Pages: 132101
Surface science [North-Holland], Volume: 601 Issue: 13 Pages: 2623-2627
AIP Conference Proceedings [American Institute of Physics], Volume: 893 Issue: 1 Pages: 241-242
Iso-concentration study of atomistic mechanism of B diffusion in Si
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms [North-Holland], Volume: 257 Issue: 1-2 Pages: 165-168
Magnetic response of Mn-doped amorphous porous Ge fabricated by ion-implantation
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms [North-Holland], Volume: 257 Issue: 1-2 Pages: 365-368
Magneto-optical characterization of MnxGe 1− x alloys obtained by ion implantation
Journal of magnetism and magnetic materials [North-Holland], Volume: 310 Issue: 2 Pages: 2150-2151
Carrier concentration and mobility profiling in quantum wells by scanning probe microscopy
Microelectronic engineering [Elsevier], Volume: 84 Issue: 3 Pages: 446-449
Physica Status Solidi A (Applied Research) [], Volume: 204
Appl. Phys. Lett. [], Volume: 91 Pages: 132101
Microscopic investigation of the structural and electronic properties of ion implanted Mn–Ge alloys
physica status solidi (a) [WILEY‐VCH Verlag], Volume: 204 Issue: 1 Pages: 136-144
physica status solidi (a) [WILEY‐VCH Verlag], Volume: 204 Issue: 1 Pages: 145-151
Atomistic mechanism of boron diffusion in silicon
Physical review letters [American Physical Society], Volume: 97 Issue: 25 Pages: 255902
Point defect engineering in preamorphized silicon enriched with fluorine
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms [North-Holland], Volume: 253 Issue: 1-2 Pages: 94-99
B diffusion and activation phenomena during post-annealing of C co-implanted ultra-shallow junctions
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms [North-Holland], Volume: 253 Issue: 1-2 Pages: 46-49
Evidences of F-induced nanobubbles as sink for self-interstitials in Si
Applied physics letters [American Institute of Physics], Volume: 89 Issue: 17 Pages: 171916
Surface science [North-Holland], Volume: 600 Issue: 20 Pages: 4723-4727
Direct structural evidences of Mn dilution in Ge
Journal of Applied Physics [American Institute of Physics], Volume: 100 Issue: 6 Pages: 063528
Ferromagnetism in ion implanted amorphous and nanocrystalline Mn x Ge 1− x
Physical Review B [American Physical Society], Volume: 74 Issue: 8 Pages: 085204
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms [North-Holland], Volume: 249 Issue: 1-2 Pages: 894-896
Mechanisms for the activation of ion-implanted Fe in InP
Journal of applied physics [American Institute of Physics], Volume: 100 Issue: 2 Pages: 023539
Physical Review B [American Physical Society], Volume: 73 Issue: 19 Pages: 195207
Fluorine in preamorphized Si: Point defect engineering and control of dopant diffusion
Journal of applied physics [American Institute of Physics], Volume: 99 Issue: 10 Pages: 103510
Phase separation and dilution in implanted Mn x Ge 1− x alloys
Applied Physics Letters [American Institute of Physics], Volume: 88 Issue: 6 Pages: 061907
Size effects on the electrical activation of low-energy implanted B in Si
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena [American Vacuum Society], Volume: 24 Issue: 1 Pages: 468-472
Fluorine incorporation in preamorphized silicon
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena [American Vacuum Society], Volume: 24 Issue: 1 Pages: 433-436
Scanning capacitance microscopy: Quantitative carrier profiling down to nanostructures
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena [American Vacuum Society], Volume: 24 Issue: 1 Pages: 370-374
Drift mobility in quantum nanostructures by scanning probe microscopy
Applied physics letters [American Institute of Physics], Volume: 88 Issue: 4 Pages: 043117
Fluorine incorporation during Si solid phase epitaxy
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms [North-Holland], Volume: 242 Issue: 1-2 Pages: 614-616
Aluminium Implantation in Germanium: Uphill Diffusion, Electrical Activation, and Trapping
J. Vac. Sci. Technol. B [], Volume: 24 Pages: 381
Journal of Vacuum Science and Technology-Section B [Woodbury, NY: Published for the Society by the American Institute of Physics, 1991-], Volume: 24 Issue: 1 Pages: 468-472
Journal of Vacuum Science and Technology-Section B [Woodbury, NY: Published for the Society by the American Institute of Physics, 1991-], Volume: 24 Issue: 1 Pages: 433-436
Physical Review-Section B-Condensed Matter [Woodbury, NY: published by the American Physical Society through the American Institute of Physics, c1998-], Volume: 73 Issue: 19 Pages: 195207-195207
Incorporation of active Fe impurities in GaInP by high temperature ion implantation
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms [North-Holland], Volume: 242 Issue: 1-2 Pages: 653-655
Atomistic mechanism of B diffusion in Si
PHYSICAL REVIEW LETTERS [], Volume: 97 Pages: 255902
Nanoporosity Induced by Ion Implantation in Germanium Thin Films Grown by Molecular Beam Epitaxy
J. Vac. Sci. Technol. B [], Volume: 24 Pages: 510
Electrical activation of the Fe 2+∕ 3+ trap in Fe-implanted InP
Applied Physics Letters [American Institute of Physics], Volume: 87 Issue: 25 Pages: 252113
Submicron confinement effect on electrical activation of B implanted in Si
Materials Science and Engineering: B [Elsevier], Volume: 124 Pages: 257-260
Materials Science and Engineering: B [Elsevier], Volume: 124 Pages: 54-61
Dissolution kinetics of B clusters in crystalline Si
Materials Science and Engineering: B [Elsevier], Volume: 124 Pages: 32-38
Experimental evidences for two paths in the dissolution process of B clusters in crystalline Si
Applied Physics Letters [American Institute of Physics], Volume: 87 Issue: 22 Pages: 221902
B activation enhancement in submicron confined implants in Si
Applied Physics Letters [American Institute of Physics], Volume: 87 Issue: 13 Pages: 133110
Fluorine in Si: Native-defect complexes and the suppression of impurity diffusion
Physical Review B [American Physical Society], Volume: 72 Issue: 4 Pages: 045219
Interaction between implanted fluorine atoms and point defects in preamorphized silicon
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms [North-Holland], Volume: 230 Issue: 1-4 Pages: 220-224
Fluorine segregation and incorporation during solid-phase epitaxy of Si
Applied Physics Letters [American Institute of Physics], Volume: 86 Issue: 12 Pages: 121905
Experimental evidences for two paths in the dissolution process of B clusters in crystalline silicon
APPLIED PHYSICS LETTERS [], Volume: 87 Pages: 221902-1-3
Role of the Substrate Doping in the Activation of Fe2+ centers in Fe implanted InP
MRS Online Proceedings Library Archive [Cambridge University Press], Volume: 864
Role of the Substrate Doping in the Activation of Fe 2+ centers in Fe implanted InP
MRS Online Proceedings Library Archive [Cambridge University Press], Volume: 864
Carrier distribution in quantum nanostructures by scanning capacitance microscopy
Journal of applied physics [American Institute of Physics], Volume: 97 Issue: 1 Pages: 014302
Ultrathin Sb-implanted ZnO transparent electrodes synthesized by MOCVD liquid precursors.
E-MRS 2016 Spring Meeting, symposium T [E-MRS 2016 Spring Meeting], Pages: ?-?
Electronic, and Electrical Properties of CdO Thin Films.
E-MRS 2015 Spring Meeting, symposium B: Materials for applications in water treatment and water splitting. [E-MRS 2015], Pages: ?-?
Synthesis of TiO2 thin film with embedded Au nanoparticles.
E-MRS Spring Meeting [],
Characterisation of solid-phase-epitaxy of amorphous germanium thin-films
COMMAD 2012 [IEEE], Pages: 177-178
Self-ion-induced nanostructures in Ge
2009 MRS fall meeting [MRS], Pages: 350-350
Boron Diffusion and Electrical Activation in Pre-Amorphized Si Enriched with Fluorine
2007 15th International Conference on Advanced Thermal Processing of Semiconductors [IEEE], Pages: 81-85
Ion implanted Mn-Ge alloys: structural, electronic, and magnetic properties
Ion beam Modification of Materials (IBMM) [],
Use of ion implantation in the realization of a group-IV MnxGe1-x diluted magnetic semiconductor
European Materials Research Society (EMRS) [],
High resistivity in GaInP/GaAs by high temperature Fe ion implantation
International Conference on Indium Phosphide and Related Materials, 2005 [IEEE], Pages: 653-656
Deep levels characterization in high temperature iron implanted InP
International Conference on Indium Phosphide and Related Materials, 2005 [IEEE], Pages: 410-413
Solid State Phenomena [Trans Tech Publications Ltd], Volume: 108 Pages: 395-400
High Resistivity in GaInP/GaAs by High Temperture Fe Ion Implantation
International Conference on Indium Phosphide and Related Materials [], Pages: 410-413
Ion implantation defects and shallow junctions in Si and Ge
Semiconductors and Semimetals [Elsevier], Volume: 91 Pages: 93-122
XX convegno Nazionale SIPI [], Pages: 52-52
LO Z-TEST PER LA VALUTAZIONE DELLA TOSSICITA'DI NANO PARTICELLE DI BIOSSIDO DI TITANIO
XX congresso Nazionale SIPI [], Pages: 31-31
Nanopore formation induced by ion-implantation in Ge: optical properties
SYMPOSIUM E Defect-induced effects in nanomaterials [FRA], Pages: 4-4
Optical properties of ion-implanted nanoporous Ge
E-MRS Spring 2013, book of abstract [E-MRS], Pages: 200-201
Structural and electrical characterization of Fe implanted GaInP
Proceedings of MRS Conference" Symposium F: Semiconductor Defect Engineering--Materials, Synthetic Structures, and Devices II" [USA],
Proceedings on 15th International Conferencc Ion Beam Modification of Materials (IBMM) [F. Priolo, S. Coffa, MG Grimaldi],
Carrier distribution in quantum nanostructures studied by scanning capacitance microscopy
Microscopy of Semiconducting Materials [Springer, Berlin, Heidelberg], Pages: 487-490