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We present the properties and potentialities of light emitting devices based on amorphous Si nanoclusters. Amorphous nanostructures may constitute an interesting alternative to Si nanocrystals for the monolithic integration of optical and electrical functions in Si technology. In fact, they exhibit an intense room temperature electroluminescence (EL). The EL properties of these devices have been studied as a function of current and of temperature. Moreover, to improve the extraction efficiency of the light, we have integrated the emitting system with a 2D photonic crystal structure opportunely fabricated by using conventional optical lithography to reduce the total internal reflection of the emitted light. The extraction efficiency in such devices increases by a factor of 4 at a resonance wavelength.
Tianjin University of Technology
Publication date: 
1 Sep 2007

Alessia Irrera, Fabio Iacona, Giorgia Franzò, Andrea Canino, Delfo Sanfilippo, Gianfranco Di Stefano, Angelo Piana, Pier Giorgio Fallica, Francesco Priolo

Biblio References: 
Volume: 3 Issue: 5 Pages: 321-325
Optoelectronics Letters