Type:
Conference
Description:
We investigated the structural and electrical behavior of Fe implanted and annealed MOVPE grown GalnP layers lattice matched to GaAs substrates, demonstrating that high temperature Fe implantation can give rise to stable semi-insulating layers
Publisher:
IEEE
Publication date:
8 May 2005
Biblio References:
Pages: 653-656
Origin:
International Conference on Indium Phosphide and Related Materials, 2005