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Obtaining high level active n+ carrier concentrations in germanium (Ge) has been a significant challenge for further development of Ge devices. By ion implanting phosphorus (P) and fluorine (F) into Ge and restoring crystallinity using Nd:YAG nanosecond pulsed laser melting (PLM), we demonstrate 1020 cm−3 n+ carrier concentration in tensile-strained epitaxial germanium-on-silicon. Scanning electron microscopy shows that after laser treatment, samples implanted with P have an ablated surface, whereas P + F co-implanted samples have good crystallinity and a smooth surface topography. We characterize P and F concentration depth profiles using secondary ion mass spectrometry and spreading resistance profiling. The peak carrier concentration, 1020 cm−3 at 80 nm below the surface, coincides with the peak F concentration, illustrating the key role of F in increasing donor activation. Cross-sectional …
AIP Publishing LLC
Publication date: 
28 Apr 2018

David Pastor, Hemi H Gandhi, Corentin P Monmeyran, Austin J Akey, Ruggero Milazzo, Yan Cai, Enrico Napolitani, Russell M Gwilliam, Iain F Crowe, Jurgen Michel, LC Kimerling, Anuradha Agarwal, Eric Mazur, Michael J Aziz

Biblio References: 
Volume: 123 Issue: 16 Pages: 165101
Journal of Applied Physics